DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83 HF/VHF power transistor
Product specification August 1986
Philips Semiconduct...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting
amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply
voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW83
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) PIN CONFIGURATION
halfpage
VCE V 26 28
f MHz 1,6 − 28 1,6 − 28
PL W 0 − 10 (P.E.P.) 3 − 30 (P.E.P.) >
Gp dB 20 typ. 21
ηdt % −
IC A 1,35 <
d3 dB −40 typ. −30
Th °C 70 25
typ. 40 typ. 1,34
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter
voltage (VBE = 0) peak value Co...