TRANSISTOR. BLX96 Datasheet

BLX96 Datasheet PDF


Part BLX96
Description NPN SILICON RF POWER TRANSISTOR
Feature BLX96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLX96 is Designed for Class A Television Ba.
Manufacture Advanced Semiconductor
Datasheet
Download BLX96 Datasheet


BLX96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLX BLX96 Datasheet
BLX96 Datasheet




BLX96
BLX96
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The BLX96 is Designed for Class A
Television Band IV- V Amplifier
Applications Requiring High Linearity.
FEATURES:
PG = 7.0 dB Typical at 860 MHz
IMD3 = -63 dBc Typ. at PREF = 0.5 W
Omnigold™ Metallization System
MAXIMUM RATINGS
IC 1.0 A
VCB
PDISS
45 V
16 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG
θJC
-65 OC to +150 OC
11 OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
E
F
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
ORDER CODE: ASI10784
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 40 mA
BVCER
IC = 40 mA
RBE = 10
BVCBO
IC = 2 mA
BVEBO
IE = 0.5 mA
hFE VCE = 20 V
IC = 250 mA
MINIMUM TYPICAL MAXIMUM
24
50
45
3.5
20 150
UNITS
V
V
V
V
---
COB
VCB = 20 V
f = 1.0 MHz
10 pF
PG VCE = 25 V
IC= 250 mA
PREF = 0.5 W
6.0
7.0
dB
F = 860 MHz
IMD3
Vision = -8.0 dB Sound = -7.0 dB Chroma = -16 dB
-60 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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