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BLY92A Datasheet

Part Number BLY92A
Manufacturers ASI
Logo ASI
Description NPN SILICON RF POWER TRANSISTOR
Datasheet BLY92A DatasheetBLY92A Datasheet (PDF)

BLY92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92A is an NPN power transistor designed for 138-175 MHz VHF communications. It utilizes emitter ballasting to provide high VSWR handling capability. FEATURES: • Common Emitter, 28 V operation • PG = 10 dB at 10W/175 MHz • Omnigold™ Metalization System • High VSWR capability MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS TJ 13.0 W -65 °OC to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W PACKAGE STYLE .3.

  BLY92A   BLY92A






Part Number BLY92C
Manufacturers ASI
Logo ASI
Description NPN SILICON RF POWER TRANSISTOR
Datasheet BLY92A DatasheetBLY92C Datasheet (PDF)

BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLY92C is Designed for Class C FM Amplifier Applications up to 250 MHz. FEATURES: • PG = 11 dB Typical at 175 MHz • High Load VSWR Capability • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCB 65 V VCE 35 V VEB PDISS TJ TSTG θJC 4.0 V 40 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 4.4 OC/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE ORDER CODE: ASI10758 CHARACTERISTICS TC = 25 OC SYMBOL .

  BLY92A   BLY92A







NPN SILICON RF POWER TRANSISTOR

BLY92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92A is an NPN power transistor designed for 138-175 MHz VHF communications. It utilizes emitter ballasting to provide high VSWR handling capability. FEATURES: • Common Emitter, 28 V operation • PG = 10 dB at 10W/175 MHz • Omnigold™ Metalization System • High VSWR capability MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS TJ 13.0 W -65 °OC to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W PACKAGE STYLE .380 4L STUD .112x45° A B E ØC C E B D #8-32 UNC-2A E DIM M IN IM U M inches / mm A .220 / 5.59 B .980 / 24.89 C .370 / 9.40 D .004 / 0.10 E .320 / 8.13 F .100 / 2.54 G .450 / 11.43 H .090 / 2.29 I .155 / 3.94 J HI J G F MAXIMUM inches / mm .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS TC = 25°C SYMBOL NONETEST CONDITIONS BVCBO IC = 200 mA BVCES IC = 200 mA BVCEO IC = 200 mA BVEBO IE = 10 mA ICBO VCB = 30 V hFE VCE = 5.0 V IC = 200 mA MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 5.0 200 UNITS V V V V mA --- Cob VCB = 30 V f = 1.0 MHz 15 pF PG VCC = 28 V POUT = 10 W ηC PIN = 1.0 W f = 175 MHz 10 60 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


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