BMS3004

Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET –75V, –68A, 8.5mΩ, TO-220F-3SG http://onsemi.com Features ON-resistance RDS(on)1=6.5mΩ (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--48V, L=100μH, IAV=--54A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3SG Ratings --75 ±20 --68 --272 2.0 40 150 --55 to +150 380 --54 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode ...