General Description
The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The...
General Description
The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary
MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
High power and current handing capability
Typical Application
BPM0306CG
30V Complementary
MOSFET
Application
H-bridge Inverters
Ordering Information
N-channel
P-channel
Figure 1. Schematic Diagram
Part Number
Package
Operating Temperature
Packing Type
BPM0306CG
SOP-8
-40 ℃ to 105 ℃
Tape & Reel 4,000pcs/Reel
Marking
BPM0306 XXXXXY CGXWW
BPM0306CG_EN_DS_Rev.1.0
www.bpsemi.com BPS Confidential – Customer Use Only
1
BPM0306CG
30V Complementary
MOSFET
Pin Configuration and Marking Information
S1 1 G1 2 S2 3 G2 4
BPM0306 XXXXXY CGXWW
8 D1 7 D1 6 D2 5 D2
XXXXXY: Lot Code CG: Package Code X: Year ...
