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BPV11 Datasheet

Part Number BPV11
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Phototransistor
Datasheet BPV11 DatasheetBPV11 Datasheet (PDF)

www.vishay.com BPV11 Vishay Semiconductors Silicon NPN Phototransistor 12785 DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity.

  BPV11   BPV11






Part Number BPV11F
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Phototransistor
Datasheet BPV11 DatasheetBPV11F Datasheet (PDF)

www.vishay.com BPV11F Vishay Semiconductors Silicon NPN Phototransistor 12784 DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle o.

  BPV11   BPV11







Part Number BPV10NF
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon PIN Photodiode
Datasheet BPV11 DatasheetBPV10NF Datasheet (PDF)

www.vishay.com BPV10NF Vishay Semiconductors Silicon PIN Photodiode 16140-1 DESCRIPTION BPV10NF is a PIN photodiode with high speed and high sensitivity in black, T-1¾ plastic package with daylight blocking filter. Filter bandwidth is matched with 850 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High sensitivity • Daylight blocking filter matched with 850 nm to 950 nm emitters • Fast response times • Angle o.

  BPV11   BPV11







Part Number BPV10
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon PIN Photodiode
Datasheet BPV11 DatasheetBPV10 Datasheet (PDF)

www.vishay.com BPV10 Vishay Semiconductors Silicon PIN Photodiode 94 8390 DESCRIPTION BPV10 is a PIN photodiode with high speed and high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • High.

  BPV11   BPV11







Silicon NPN Phototransistor

www.vishay.com BPV11 Vishay Semiconductors Silicon NPN Phototransistor 12785 DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity:  = ± 15° • Base terminal connected • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT BPV11 Ica (mA) 10 Note • Test condition see table “Basic Characteristics”  (deg) ± 15 0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE BPV11 Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T = 0.5, tp  10 ms Tamb  47 °C t  5 s, 2 mm from body Connected with Cu wire, 0.14 mm2 VCBO VCEO VEBO IC ICM PV Tj Tamb.


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