www.vishay.com
BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor
12784
DESCRIPTION BPV11F is a silicon NPN pho...
www.vishay.com
BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor
12784
DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters.
FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 High radiant sensitivity Daylight blocking filter matched with 940 nm
emitters Fast response times Angle of half sensitivity: = ± 15° Base terminal connected Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Detector for industrial electronic circuitry, measurement
and control
PRODUCT SUMMARY
COMPONENT BPV11F
Ica (mA) 9
Note Test condition see table “Basic Characteristics”
(deg) ± 15
0.5 (nm) 900 to 980
ORDERING INFORMATION
ORDERING CODE BPV11F
Note MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector base
voltage Collector emitter
voltage Emitter base
voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
tp/T = 0.5, tp 10 ms Tamb 47 °C
t 5 s, 2 mm from body Connected with Cu wire, 0.14 mm2
VCBO VCEO VEBO...