Silicon NPN Phototransistor
www.vishay.com
BPW16N
Vishay Semiconductors
Silicon NPN Phototransistor
94 8638
DESCRIPTION BPW16N is a silicon NPN p...
Description
www.vishay.com
BPW16N
Vishay Semiconductors
Silicon NPN Phototransistor
94 8638
DESCRIPTION BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-¾ plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch.
FEATURES Package type: leaded Package form: T-¾ Dimensions (in mm): Ø 1.8 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 40° Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT BPW16N
Ica (mA) 0.14
Note Test condition see table “Basic Characteristics”
ϕ (deg) ± 40
λ0.1 (nm) 450 to 1040
...
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