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BPW34SR Datasheet

Part Number BPW34SR
Manufacturers OSRAM
Logo OSRAM
Description Silicon PIN Photodiode
Datasheet BPW34SR DatasheetBPW34SR Datasheet (PDF)

2018-02-23 Silicon PIN Photodiode Version 1.4 BPW 34 SR Features: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Photointerrupters • Industrial electronics • For control and drive circuits • IR re.

  BPW34SR   BPW34SR






Part Number BPW34SE9601
Manufacturers OSRAM
Logo OSRAM
Description Silicon PIN Photodiode
Datasheet BPW34SR DatasheetBPW34SE9601 Datasheet (PDF)

2018-02-23 Silicon PIN Photodiode Version 1.2 BPW 34 S E9601 Features: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density Applications • Photointerrupters • Industrial electronics • For control and drive circuits • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPW 34 S E9601 Photocurrent Ordering Cod.

  BPW34SR   BPW34SR







Part Number BPW34S
Manufacturers OSRAM
Logo OSRAM
Description Silicon PIN Photodiode
Datasheet BPW34SR DatasheetBPW34S Datasheet (PDF)

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPW 34 S   BPW 34 S DIL SMT Silicon PIN Photodiode Applications ——LIDAR, Pre-Crash, ACC ——Rain sensors Features: ——Package: clear epoxy ——Corrosion Robustness Class: 3B ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——Suitable for reflow soldering ——Especially suitable for applicat.

  BPW34SR   BPW34SR







Part Number BPW34S
Manufacturers Vishay
Logo Vishay
Description Silicon PIN Photodiode
Datasheet BPW34SR DatasheetBPW34S Datasheet (PDF)

www.vishay.com BPW34, BPW34S Vishay Semiconductors Silicon PIN Photodiode 94 8583 DESCRIPTION BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation. BPW34S is packed in tubes, specifications like BPW34. FEATURES • Package type: leaded • Package form: top view • Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity.

  BPW34SR   BPW34SR







Part Number BPW34S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Photodiode
Datasheet BPW34SR DatasheetBPW34S Datasheet (PDF)

Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S (E9087) feo06643 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Mer.

  BPW34SR   BPW34SR







Silicon PIN Photodiode

2018-02-23 Silicon PIN Photodiode Version 1.4 BPW 34 SR Features: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Photointerrupters • Industrial electronics • For control and drive circuits • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPW 34 SR Photocurrent Ordering Code IP [µA] Ev = 1000 lx, Std. Light A, VR = 5 V 80 (≥ 50) Q65110A2701 2018-02-23 1 Version 1.4 Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (TA = 25 °C) Parameter Photocurrent (Ev = 1000 lx, Std. Light A, VR = 5 V) Wavelength of max. sensitivity Spectral range of sensitivity Radiant sensitive area Dimensions of radiant sensitive area Half angle Dark current (VR = 10 V) Spectral sensitivity of the chip (λ = 850 nm) Quantum yield of the chip (λ = 850 nm) Open-circuit voltage (Ev = 1000 lx, Std. Light A) Short-circuit current (Ev = 1000 lx, Std. Light A) Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) Forward voltage (IF = 100 mA, E = 0) Capacitance (VR = 0 V, f = 1 MHz, E.


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