2015-12-23
Silicon Differential Photodiode Version 1.3
BPX 48
Features: • Especially suitable for applications from 400...
2015-12-23
Silicon Differential Photodiode Version 1.3
BPX 48
Features: Especially suitable for applications from 400 nm to 1100 nm High photosensitivity DIL plastic package with high packing density Double diode with extremely high homogeneousness
Applications Industrial electronics For control and drive circuits Edge control Follow-up control Path and angle scanning
Ordering Information Type:
BPX 48
Photocurrent
Ordering Code
IP [µA]
Ev = 1000 lx, Std. Light A, VR = 5 V, T = 2856 K
24 (≥ 15)
Q62702P0017S001
2015-12-23
1
Version 1.3
BPX 48
Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse
voltage Total Power dissipation Electrostatic discharge (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Symbol
Top; Tstg VR Ptot VESD
Values -40 ... 80
10 50 2000
Unit °C V mW V
Characteristics (TA = 25 °C, per single diode / für jede Einzeldiode)
Parameter
Symbol
Photocurrent (Ev = 1000 lx, Std. Light A, VR ...
