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BPX61 Datasheet

Part Number BPX61
Manufacturers OSRAM
Logo OSRAM
Description Silicon NPN Phototransistor
Datasheet BPX61 DatasheetBPX61 Datasheet (PDF)

2015-12-23 Silicon PIN Photodiode Version 1.3 BPX 61 Features: • Suitable up to 125 °C • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Hermetically sealed metal package (similar to TO-5) Applications • Industrial electronics • For control and drive circuits • Photointerrupters • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPX 61 Photocurrent Ordering Code IP [µA] Ev = 10.

  BPX61   BPX61






Part Number BPX61
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silizium-PIN-Fotodiode Silicon PIN Photodiode
Datasheet BPX61 DatasheetBPX61 Datasheet (PDF)

BPX 61 Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 61 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q Hermetisch dichte Metallbauform (ähnlich TO-5) Anwendungen q Lichtschranken für Gleich- und Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Hermetically sealed met.

  BPX61   BPX61







Silicon NPN Phototransistor

2015-12-23 Silicon PIN Photodiode Version 1.3 BPX 61 Features: • Suitable up to 125 °C • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Hermetically sealed metal package (similar to TO-5) Applications • Industrial electronics • For control and drive circuits • Photointerrupters • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPX 61 Photocurrent Ordering Code IP [µA] Ev = 1000 lx, Std. Light A, VR =5V 70 (≥ 50) Q62705P0025 2015-12-23 1 Version 1.3 Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (TA = 25 °C) Parameter Spectral sensitivity (VR = 5 V) Photocurrent (Ev = 1000 lx, Std. Light A, VR = 5 V) Wavelength of max. sensitivity Spectral range of sensitivity Radiant sensitive area Dimensions of radiant sensitive area Half angle Dark current (VR = 10 V) Spectral sensitivity of the chip (λ = 850 nm) Quantum yield of the chip (λ = 850 nm) Open-circuit voltage (Ev = 1000 lx, Std. Light A) Short-circuit current (Ev = 1000 lx, Std. Light A) Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) Forward voltage (IF = 100 mA, E = 0) Capacitance (VR = 0 V, f = 1 MHz, E = 0) Temperature coefficient of VO BPX 61 Symbol Top; Tstg VR Ptot VESD Values -40 ... 125 32 250 2000 Unit °C V mW V (typ) Sym.


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