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BR24L08F-W Datasheet

Part Number BR24L08F-W
Manufacturers Rohm
Logo Rohm
Description 10248 bit electrically erasable PROM
Datasheet BR24L08F-W DatasheetBR24L08F-W Datasheet (PDF)

Memory ICs BR24L08-W / BR24L08F-W / BR24L08FJ-W BR24L08FV-W / BR24L08FVM-W 1024×8 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W The BR24L08-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I C BUS is a registered trademark of Philips. 2 zApplications General purpose zFeatures 1) 1024 registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed.

  BR24L08F-W   BR24L08F-W






10248 bit electrically erasable PROM

Memory ICs BR24L08-W / BR24L08F-W / BR24L08FJ-W BR24L08FV-W / BR24L08FVM-W 1024×8 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W The BR24L08-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I C BUS is a registered trademark of Philips. 2 zApplications General purpose zFeatures 1) 1024 registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1µA (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL•SDA for noise suppression. 14) Initial data FFh in all address. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Limits −0.3 to +6.5 800(DIP8) 450(SOP8) Power dissipation Pd 450(SOP-J8) 300(SSOP-B8) 310(MSOP8) Storage temperature Operating temperature Terminal voltage ∗1 ∗2 ∗3 ∗4 Unit V ∗1 ∗2 ∗2 ∗3 ∗4 mW Tstg Topr − −65 to +125 −40 to +85 −0.3 to VCC+0.3 °C °C V Reduced by 8.0mW for each increase in Ta of 1°C over 25°C. Reduced by 4.5mW for each inc.


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