DatasheetsPDF.com

BR24L16F-W Datasheet

Part Number BR24L16F-W
Manufacturers Rohm
Logo Rohm
Description 2k8 bit electrically erasable PROM
Datasheet BR24L16F-W DatasheetBR24L16F-W Datasheet (PDF)

Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-W BR24L16FV-W / BR24L16FVM-W The BR24L16-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips. zApplications General purpose zFeatures 1) 2k registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write.

  BR24L16F-W   BR24L16F-W






2k8 bit electrically erasable PROM

Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-W BR24L16FV-W / BR24L16FVM-W The BR24L16-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips. zApplications General purpose zFeatures 1) 2k registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16 byte page write mode. 6) Low power consumption. Write (5V) : 1.2mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1µA (Typ.) 7) DATA security Write protect feature (WP pin) . Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL•SDA for noise suppression. 14) Initial data FFh in all address. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Limits −0.3 to +6.5 800 (DIP8) 450 (SOP8) Power dissipation Pd 450 (SOP-J8) ∗1 ∗2 ∗3 Unit V mW 300 (SSOP-B8) ∗4 310 (MSOP8) Storage temperature Operating temperature Terminal voltage ∗1 ∗2, 3 ∗4 ∗5 ∗5 Tstg Topr − −65 to +125 −40 to +85 −0.3 to VCC+0.3 °C °C V Degradation is done at 8.0mW/°C for operation above 25°C. Degradation is done at 4.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)