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BR24L32FJ-W Datasheet

Part Number BR24L32FJ-W
Manufacturers Rohm
Logo Rohm
Description 4k8 bit electrically erasable PROM
Datasheet BR24L32FJ-W DatasheetBR24L32FJ-W Datasheet (PDF)

BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W Memory ICs 4k×8 bit electrically erasable PROM BR24L32-W / BR24L32F-W / BR24L32FJ-W BR24L32FV-W The BR24L32-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips. zApplications General purpose zFeatures 1) 4k registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Automatic erase. 5) 32byte Page Write Mode. 6) .

  BR24L32FJ-W   BR24L32FJ-W






4k8 bit electrically erasable PROM

BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W Memory ICs 4k×8 bit electrically erasable PROM BR24L32-W / BR24L32F-W / BR24L32FJ-W BR24L32FV-W The BR24L32-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips. zApplications General purpose zFeatures 1) 4k registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Automatic erase. 5) 32byte Page Write Mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1µA (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL,SDA for noise suppression. 14) Initial data FFh in all address. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Limits −0.3 to +6.5 800(DIP8) 450(SOP8) Power dissipation Pd 450(SOP-J8) −65 to +125 −40 to +85 −0.3 to VCC+0.3 ∗1 ∗2 ∗3 Unit V mW 300(SSOP-B8) ∗4 Storage temperature Operating temperature Terminal voltage Tstg Topr − °C °C V ∗1 Degradation is done at 8.0mW/°C for operation above 25°C. ∗2,3 Degradation is done at 4.5mW/°C for operation above 25°C. ∗4 Degradation is done at 3.0mW/°C for operation above 25°C. 1/25 BR.


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