Serial EEPROMs. BR25H160-W Datasheet

BR25H160-W Datasheet PDF


Part Number

BR25H160-W

Description

SPI BUS Serial EEPROMs

Manufacture

Rohm

Total Page 17 Pages
Datasheet
Download BR25H160-W Datasheet


BR25H160-W
TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
SPI BUS Serial EEPROMs
Supply voltage 2.5V~5.5V
Operating temperature -40°C ~ +125°C type
☆☆
BR25H010-W, BR25H020-W, BR25H040-W, BR25H080-W, BR25H160-W, BR25H320-W
: Under development
Description
□□□BR25H
-W series is a serial EEPROM of SPI BUS interface method.
Features
High speed clock action up to 5MHz (Max.)
Wait function by HOLDB terminal.
Part or whole of memory arrays settable as read only memory area by program.
2.55.5V single power source action most suitable for battery use.
Page write mode useful for initial value write at factory shipment.
Highly reliable connection by Au pad and Au wire.
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
Auto erase and auto end function at data rewrite.
Low current consumption
At write action (5V) : 1.5mA (Typ.)
Page write
Number of
pages
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
Address auto increment function at read action
Product
number
Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage.
SOP8, SOP-J8 Package
Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
Data kept for 40 years.
Data rewrite up to 1,000,000times.
16 Byte
BR25H010-W
BR25H020-W
BR25H040-W
32 Byte
BR25H080-W
BR25H160-W
BR25H320-W
BR25H series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
32Kbit
Bit format
128×8
256×8
512×8
1K×8
2K×8
4Kx8
Type
BR25H010-W
BR25H020-W
BR25H040-W
BR25H080-W
BR25H160-W
BR25H320-W
Power source
voltage
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
SOP8
SOP-J8
Ver A. Aug. 2007

BR25H160-W
Absolute maximum ratings (Ta=25°C)
Parameter
Impressed voltage
Permissible
dissipation
Storage
temperature range
Operating
temperature range
Terminal voltage
Symbol
Vcc
Pd
Tstg
Topr
Limits
-0.3~+6.5
450(SOP8) *1
450(SOP-J8) *2
-65~150
-40~125
-0.3~Vcc+0.3
Unit
V
mW
°C
°C
V
When using at Ta=25or higher, 3.6mW (*1,*2) to be reduced per 1
Memory cell characteristics (Vcc=2.5V5.5V)
Parameter
Number of data
rewrite times ж1
Data hold years
ж1
Limits
Min Typ.
1,000,000 -
500,000
-
300,000
-
40 -
20 -
Max
-
-
-
-
-
Unit Condition
Times
Times
Times
Ta85
Ta105
Ta125
Years Ta25°C
Years Ta85°C
ж1:Not 100% TESTED
Recommended action conditions
Parameter
Power source voltage
Input voltage
Symbol
Vcc
Vin
Limits
2.5~5.5
0~Vcc
Unit
V
Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter
Symbol Conditions Min. Max. Unit
Input capacity ж1
Output capacity ж1
CIN
COUT
VIN=GND
VOUT=GND
8
8 pF
*1: Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta=-40~+125°C, Vcc=2.5~5.5V)
Parameter
Symbol
Limits
Min. Typ. Max.
Unit
Conditions
“H” input voltage
VIH
0.7x
Vcc
Vcc
+0.3
V 2.5Vcc5.5V
“L” output voltage
VIL
-0.3 –
0.3x
Vcc
V
2.5Vcc5.5V
“L” output voltage
VOL 0 – 0.4 V IOL=2.1mA
“H” output voltage
VOH
Vcc
-0.5
Vcc
V IOH=-0.4mA
Input leak current
ILI -10 – 10 μA VIN=0~Vcc
Output lead current
ILO -10 – 10 μA VOUT=0~Vcc, CSB=Vcc
Vcc=2.5V,fSCK=5MHz, tE/W=5ms
ICC1
2.0
mA
VIH/VIL=0.9Vcc/0.1Vcc,
Byte write, Page write
Current consumption at write
Write status regisuter
action
Vcc=5.5V,fSCK=5MHz, tE/W=5ms
ICC2
3.0
mA
VIH/VIL=0.9Vcc/0.1Vcc
Byte write, Page write
Write status register
Vcc=2.5V,fSCK=5MHz
ICC3 – – 1.5 mA VIH/VIL=0.9Vcc/0.1Vcc,
Current consumption at read
Read, Read status register
action
Vcc=5.5V,fSCK=5MHz
ICC4 – – 2.0 mA VIH/VIL=0.9Vcc/0.1Vcc
Read, Read status register
Standby current
ISB
10
μA
Vcc=5.5V
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or =GND, SO=OPEN
Radiation resistance design is not made
Block diagram
CSB
SCK
SI
HOLDB
WPB
SO
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
INSTRUCTION
REGISTER
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
STATUS REGISTER
ADDRESS
712bit *1
REGISTER
ADDRESS
712bit *1
DECODER
DATA
REGISTER
READ/WRITE
8bit
AMP
8bit
132K
EEPROM
*1 7bit: BR25H010-W
8bit: BR25H020-W
9bit: BR25H040-W
10bit: BR25H080-W
11bit: BR25H160-W
12bit: BR25H320-W
Fig.1 Block diagram
2/16





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