BR34E02NUX-3

Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules) BR34E02FVT-3,BR34E02NUX-3 ●Description BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-5.5V 3) Two-wire serial interface 4) Self-Timed Erase and Write Cycle 5) Page Write Function (16byte) 6) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 7) Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby ( at 1.7V ) : 0.1µA(typ.) 8) DATA security Write protect feature (WP pin) Inhibit to WRITE at low VCC 9) Compact package: TSSOP-B8, VSON008X2030 10) High reliability fine pattern CMOS technology 11) Rewriting possible up to 1,000,000 times 12) Data retention: 40 years 13) Noise reduction Filtered inputs in SCL / SDA 14) Initial data FFh at all addresses ●BR34E02-3 Series Capacity 2Kbit Bit format 256X8 Type BR34E02-3 Power Source Voltage 1.7V～5.5V TSSOP-B8 ● VSON008X2030 ● No.11002EAT05 www.DataSheet.co.kr ●Absolute maximum ratings (Ta=25℃) Parameter Supply Voltage Power Dissipation Storage Temperature Operating Temperature Terminal Voltage (A0) Terminal Voltage (etcetera) Symbol VCC Pd Tstg Topr Ratings -0.3～+6.5 330(BR34E02FVT-3) *1 300(BR34E02NUX-3)*2 -65～+125 -40～+85 -0.3～10.0 -0.3～VCC+1.0 Unit V mW ℃ ℃ V V * Reduce by 3.3mW(*1), 3.0 mW(*2)/...