BRF3N80(BRCS3N80FL)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package.
/ Features
、、。 Low gate charge、Low Crss 、Fast switching.
/ Applications
DC/DC 。 These devices are well suited for high efficiency switch mode power supplies .
/ Equivalent Circuit
/ Pinning
1 23
PIN1:G
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking 。See Marking Instructions
http://www.fsbrec.com
1/6
BRF3N80(BRCS3N80FL)
Rev.C Feb.-2015
DATA SHEET.
N-CHANNEL MOSFET
BRF3N80(BRCS3N80FL)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package.
/ Features
、、。 Low gate charge、Low Crss 、Fast switching.
/ Applications
DC/DC 。 These devices are well suited for high efficiency switch mode power supplies .
/ Equivalent Circuit
/ Pinning
1 23
PIN1:G
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking 。See Marking Instructions
http://www.fsbrec.com
1/6
BRF3N80(BRCS3N80FL)
Rev.C Feb.-2015
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Drain-Source Voltage Drain Current Drain Current Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Power Dissipation Operating and Storage Temperature Range
Symbol
VDSS ID(Tc=25℃) ID(Tc=100℃)
IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG
Rating
800 3.0 1.9 12 ±30 120 12 1.5 75 -55 to 150
Unit
V A A A V mJ mJ A W ℃
/ Electrical Characteristics(Ta=25℃)
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
Test Conditions
BVDSS VGS=0V
ID=250μA
IDSS
VDS=800V VDS=640V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10.