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BRCS3N80FL Datasheet

Part Number BRCS3N80FL
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description N-CHANNEL MOSFET
Datasheet BRCS3N80FL DatasheetBRCS3N80FL Datasheet (PDF)

BRF3N80(BRCS3N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features 、、。 Low gate charge、Low Crss 、Fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switch mode power supplies . / Equivalent Circuit / Pinning 1 23 PIN1:G PIN 2:D PIN 3:S / hFE Classifications & Marking 。See Marking Instructions http://www.fsbrec.com 1/6 BRF3N80(BRCS3N80FL) Rev.C Feb.-2015 DATA SHEET.

  BRCS3N80FL   BRCS3N80FL






N-CHANNEL MOSFET

BRF3N80(BRCS3N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features 、、。 Low gate charge、Low Crss 、Fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switch mode power supplies . / Equivalent Circuit / Pinning 1 23 PIN1:G PIN 2:D PIN 3:S / hFE Classifications & Marking 。See Marking Instructions http://www.fsbrec.com 1/6 BRF3N80(BRCS3N80FL) Rev.C Feb.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current Drain Current Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Power Dissipation Operating and Storage Temperature Range Symbol VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG Rating 800 3.0 1.9 12 ±30 120 12 1.5 75 -55 to 150 Unit V A A A V mJ mJ A W ℃ / Electrical Characteristics(Ta=25℃) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=800V VDS=640V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10.


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