IRFS840(BRCS840F)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package.
/ Features
,,。 Low gate charge, low crss, fast switching.
/ Applications
DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
/ Equivalent Circuit
/ Pinning
1 23
PIN1:G
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking 。See Marking Instructions
http://www.fsbrec.com
1/6
IRFS840(BRCS840F)
Re.
N-CHANNEL MOSFET
IRFS840(BRCS840F)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package.
/ Features
,,。 Low gate charge, low crss, fast switching.
/ Applications
DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
/ Equivalent Circuit
/ Pinning
1 23
PIN1:G
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking 。See Marking Instructions
http://www.fsbrec.com
1/6
IRFS840(BRCS840F)
Rev.C Feb.-2015
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Drain-Source Voltage Drain Current Drain Current Drain Current - Pulsed Gate-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Power Dissipation Operating and Storage Temperature Range
Symbol
VDSS ID(Tc=25℃) ID(Tc=100℃)
IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG
/ Electrical Characteristics(Ta=25℃)
Rating
500 8.0 5.1 32 ±30 8 320 13.4 44 -55 to 150
Unit
V A A A V A mJ mJ W ℃
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current Forward Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol BVDSS
IDSS
Test Conditions
VGS=0V
ID=250μA
VDS=500V VGS=0V
VDS=400V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th) VDS=VGS
I.