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BRCS840F Datasheet

Part Number BRCS840F
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description N-CHANNEL MOSFET
Datasheet BRCS840F DatasheetBRCS840F Datasheet (PDF)

IRFS840(BRCS840F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,。 Low gate charge, low crss, fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 1 23 PIN1:G PIN 2:D PIN 3:S / hFE Classifications & Marking 。See Marking Instructions http://www.fsbrec.com 1/6 IRFS840(BRCS840F) Re.

  BRCS840F   BRCS840F






N-CHANNEL MOSFET

IRFS840(BRCS840F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,。 Low gate charge, low crss, fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 1 23 PIN1:G PIN 2:D PIN 3:S / hFE Classifications & Marking 。See Marking Instructions http://www.fsbrec.com 1/6 IRFS840(BRCS840F) Rev.C Feb.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current Drain Current Drain Current - Pulsed Gate-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Power Dissipation Operating and Storage Temperature Range Symbol VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG / Electrical Characteristics(Ta=25℃) Rating 500 8.0 5.1 32 ±30 8 320 13.4 44 -55 to 150 Unit V A A A V A mJ mJ W ℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol BVDSS IDSS Test Conditions VGS=0V ID=250μA VDS=500V VGS=0V VDS=400V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS I.


2015-11-25 : K693    W11NM80    SUD19P06-60    SUD19P06-60L    K544    CR5335    CR5337    CR5337    IRFS840    CS840F   


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