BRF12N65(CS12N65F)
N-Channel MOSFET/N MOS
: ，，UPS 。
Purpose: High efficiency switch mode power supplies, Electronic...
BRF12N65(CS12N65F)
N-Channel
MOSFET/N MOS
: ，，UPS 。
Purpose: High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS.
:,,。
Features: Low gate charge，Low Crss，Fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 650 V
ID(Tc=25℃)
12 A
ID(Tc=100℃)
7.6 A
IDM 48 A
VGSS
±30
V
EAS 880 mJ
EAR 25 mJ
IAR 12 A
RθJC
2.45
℃/W
RθJA
62.5
℃/W
PD 51 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS VDS=650V VGS=0V
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=6A
gFS
VDS=40V
ID=6A
VSD
VGS=0V
IS=12A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDD=300V ID=12A RG=25Ω
tf
Min 650
3.0
Typ
0.71 13
1790 175 23 78 133 233 104
Max
1.0 ±100 5.0 0.78
1.39 2410 229
31 102 175 305 160
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
Unit
V μA nA V Ω S V
pF
ns
BRF12N65(CS12N65F)
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
...
