BRF610

www.DataSheet4U.com BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610an excellent choice for battery applications. From 10 mA to greater than 20mA, ft is nominally 10 GHz. Maximum recommended continuous current is 20 mA. A broad range of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 9 7 1.5 20 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 10 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz GHz 12 18.1 12.8 |S 21 | 2 P1d B G1d B NF hFE ICBO IEBO C CB Powe...