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BS170 Datasheet

Part Number BS170
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-channel MOSFET
Datasheet BS170 DatasheetBS170 Datasheet (PDF)

Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications su.

  BS170   BS170






Part Number BS170
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-channel MOSFET
Datasheet BS170 DatasheetBS170 Datasheet (PDF)

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC..

  BS170   BS170







Part Number BS170
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description N-channel MOSFET
Datasheet BS170 DatasheetBS170 Datasheet (PDF)

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.) D BOTTOM VIEW C G H SG D All Dimensions in mm H G H Maximum Ratings D.

  BS170   BS170







Part Number BS170
Manufacturers Motorola Inc
Logo Motorola  Inc
Description N-channel MOSFET
Datasheet BS170 DatasheetBS170 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N–Channel — Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 ± 20 ± 40 0.5 350 1 Unit Vdc Vdc Vpk Adc mW °C 2 3 CASE 29–04, STYLE 30 TO–92 (TO–226AA) .

  BS170   BS170







Part Number BS170
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-channel MOSFET
Datasheet BS170 DatasheetBS170 Datasheet (PDF)

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3 ID (A) 0.2 0.115 0.225 0.225 0.5 FEATURES D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output.

  BS170   BS170







Part Number BS170
Manufacturers NXP
Logo NXP
Description N-channel MOSFET
Datasheet BS170 DatasheetBS170 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No seco.

  BS170   BS170







N-channel MOSFET

Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • These are Pb−Free Devices DATA SHEET www.onsemi.com BS170 DGS TO−92 3 4.825x4.76 CASE 135AN D GS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 D G S SOT−23 CASE 318−08 Drain Gate Source MARKING DIAGRAM BS170 ALYW 6ZM 1 BS170, 6Z = Device Code A = Assembly Plant Code L = Wafer Lot Number YW = Assembly Start Week M = Date Code © Semiconductor Components Industries, LLC, 2010 April, 2022 − Rev. 7 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 1 Publication Order Number: MMBF170/D BS170, MMBF170 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter BS170 MMBF170 Unit VDSS VDGR VGSS ID Drain−Source Voltage Drain−Gate Voltage (RGS ≤ 1 MW) Gate.


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