BSI Very Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616LV1623
FEATURES
• Vcc operation voltage ...
BSI Very Low Power/
Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616LV1623
FEATURES
Vcc operation
voltage : 2.7 ~ 3.6V Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.)
CMOS standby current
High speed access time : -55 55ns -70 70ns
Automatic power down when chip is deselected Three state outputs and TTL compatible
Fully static operation Data retention supply
voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin
DESCRIPTION
The BS616LV1623 is a high performance, very low power
CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply
voltage. Advanced
CMOS technology and circuit techniqu...