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BS616LV1623

Brilliance Semiconductor

Very Low Power/Voltage CMOS SRAM

BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 „ FEATURES • Vcc operation voltage ...


Brilliance Semiconductor

BS616LV1623

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Description
BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 „ FEATURES Vcc operation voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin „ DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniqu...




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