BS616LV2013

B SI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2013 Very low operation voltage : 2.4 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin „ PRODUCT FAMILY PRODUCT FAMILY BS616LV2013DC BS616LV2013EC BS616LV2013TC BS616LV2013AC BS616LV2013DI BS616LV2013EI BS616LV2013TI BS616LV2013AI OPERATING TEMPERATURE Vcc RANGE The BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2013 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2013 is available in DICE form, JEDEC standard 44...