BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
DESCRIPTION
BS616LV2020
• Very...
BSI
FEATURES
Very Low Power/
Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
DESCRIPTION
BS616LV2020
Very low operation
voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max.) operating current I -grade: 35mA (Max.) operating current 0.5uA (Typ.)
CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply
voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616LV2020 is a high performance, very low power
CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply
voltage. Advanced
CMOS technology and circuit techniques provide both high speed and low power features with a typical
CMOS standby current of 0.5uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616LV2020 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2020 is available in DICE form and 48-pin BGA type.
PRODUCT FAMILY
SPEED ( ns )
Vcc=3.0V
PRODUCT FAMILY BS61...