DatasheetsPDF.com

BS616LV4025 Datasheet

Part Number BS616LV4025
Manufacturers Brilliance Semiconductor
Logo Brilliance Semiconductor
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Datasheet BS616LV4025 DatasheetBS616LV4025 Datasheet (PDF)

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4025 • Operation voltage : 4.5~5.5V • Low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=5V -55 55ns (Max.) at Vcc=5V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retent.

  BS616LV4025   BS616LV4025






Part Number BS616LV4023
Manufacturers Brilliance Semiconductor
Logo Brilliance Semiconductor
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Datasheet BS616LV4025 DatasheetBS616LV4023 Datasheet (PDF)

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4023 • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static o.

  BS616LV4025   BS616LV4025







Part Number BS616LV4021
Manufacturers Brilliance Semiconductor
Logo Brilliance Semiconductor
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Datasheet BS616LV4025 DatasheetBS616LV4021 Datasheet (PDF)

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4021 • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns.

  BS616LV4025   BS616LV4025







Part Number BS616LV4020
Manufacturers Brilliance Semiconductor
Logo Brilliance Semiconductor
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Datasheet BS616LV4025 DatasheetBS616LV4020 Datasheet (PDF)

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4020 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static ope.

  BS616LV4025   BS616LV4025







Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4025 • Operation voltage : 4.5~5.5V • Low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=5V -55 55ns (Max.) at Vcc=5V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4025 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.5uA and maximum access time of 70/55ns in 5V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), and active LOW chip enable1(CE1), an active LOW output enable(OE) and three-state output drivers. The BS616LV4025 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4025 is available in DICE form and 48-pin BGA type. „ PRODUCT FAMILY OPERATING TEMPERATURE +0 C to +70 C -40 C to +85 C O O O .


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)