BS616LV8010

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit (Single CE Pin) „ DESCRIPTION BS616LV8010 Vcc operation voltage : 2.7~3.6V Very low power consumption : Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade: 31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV8010 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.5uA at 3V/25oC and maximum access time of 55ns at 3V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers. The BS616LV8010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8010 is available in 48B BGA and 44L TSOP2 packages. „ PRODUCT FAMILY PRODUCT FAMILY BS616LV8010EC BS616LV8010FC BS616LV8010EI BS616LV8010FI OPERATING TEMPERATURE +0 C to +70 C...