BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616LV8012
• Very low operation voltage ...
BSI
FEATURES
Very Low Power/
Voltage CMOS SRAM 512K X 16 bit
DESCRIPTION
BS616LV8012
Very low operation
voltage : 2.4~5.5V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.)
CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.)
CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=3V -10 100ns (Max.) at Vcc=3V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply
voltage as low as 1.5V Easy expansion with CE2,CE1 and OE options I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV8012 is a high performance, very low power
CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply
voltage. Advanced
CMOS technology and circuit techniques provide both high speed and low power features with a typical
CMOS standby current of 0.5uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV8012 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8012 is available in 48-pin BGA package.
PRODUCT FAMILY
SPEED (ns)
Vcc=3...