BS616UV1620

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable „ DESCRIPTION BS616UV1620 Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 1.8V C-grade : 25mA (Max.) operating current I- grade : 30mA (Max.) operating current 1.2uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616UV1620 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2.0V operation. This device provide three control inputs and three states output drivers for easy memory expansion. The BS616UV1620 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV1620 is available in DICE form and 48-pin BGA type. „ PRODUCT FAMILY SPEED (ns) Vcc=2.0V PRODUCT FAMILY BS616UV1620BC BS616UV1620FC BS616UV1620BI BS616UV1620FI O...