BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616UV8020
• Ultra...
BSI
FEATURES
Ultra Low Power/
Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616UV8020
Ultra low operation
voltage : 1.8 ~3.6V Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.4uA (Typ.)
CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.)
CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply
voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616UV8020 is a high performance, ultra low power
CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply
voltage. Advanced
CMOS technology and circuit techniques provide both high speed and low power features with a typical
CMOS standby current of 0.4uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), and active LOW chip enable1(CE1), an active LOW output enable(OE) and three-state output drivers. The BS616UV8020 has an automatic power down feature, reducing the power consumption significantly when chip is desel...