BS62LV2001

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 8 bit „ DESCRIPTION BS62LV2001 Wide Vcc operation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns(Max.) at Vcc = 3.0V -10 100ns(Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE2, CE1, and OE options All I/O pins are 3V/5V tolerant The BS62LV2001 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates in a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV2001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV2001 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4...