BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
DESCRIPTION
BS62LV2003
• Wide Vcc operation voltage : ...
BSI
FEATURES
Very Low Power/
Voltage CMOS SRAM 256K X 8 bit
DESCRIPTION
BS62LV2003
Wide Vcc operation
voltage : 2.4V ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.1uA (Typ.)
CMOS standby current High speed access time : -70 70ns(Max.) at Vcc = 3.0V -10 100ns(Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply
voltage as low as 1.5V Easy expansion with CE2, CE1, and OE options
The BS62LV2003 is a high performance, very low power
CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply
voltage. Advanced
CMOS technology and circuit techniques provide both high speed and low power features with a typical
CMOS standby current of 0.1uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV2003 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV2003 is available in the JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
PRODUCT FAMILY
PRODUCT FAMILY BS62LV2003TC BS62LV2003STC BS62LV2003SC BS62LV2003TI BS62LV2003STI BS62LV2003SI OPERATING TEMPERATURE ...