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BS62LV8003

Brilliance Semiconductor

Very Low Power/Voltage CMOS SRAM 1M X 8 bit

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 1M X 8 bit „ GENERAL DESCRIPTION BS62LV8003 • Wide Vcc operation volt...


Brilliance Semiconductor

BS62LV8003

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Description
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 1M X 8 bit „ GENERAL DESCRIPTION BS62LV8003 Wide Vcc operation voltage : 2.4V ~ 3.6V Very low power consumption : Vcc = 3V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max) at Vcc = 3V -10 100ns (Max) at Vcc = 3V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options The BS62LV8003 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable(CE2) and active LOW output enable (OE) and three-state output drivers. The BS62LV8003 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV8003 is available in 44 pin TSOP2 and 48-pin BGA type. „ PRODUCT FAMILY PRODUCT FAMILY BS62LV8003EC BS62LV8003BC BS62LV8003EI BS62LV8003BI OPERATING TEMPERATURE +0 O C to +70O C -40 O C to +85O C Vcc RANGE 2.4V ~ 3.6V 2.4V ~ 3.6V SPEED ( ns )...




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