BS62UV4000

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit „ DESCRIPTION BS62UV4000 Ultra low operation voltage : 1.8V ~ 3.6V Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I -grade: 20mA (Max.) operating current 0.2uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options The BS62UV4000 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.2uA and maximum access time of 70ns in 2.0V operation. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output enable (OE) and three-state output drivers. The BS62UV4000 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV4000 is available in the JEDEC standard 32 pin SOP , TSOP, TSOP II and STSOP „ PRODUCT FAMILY PRODUCT FAMILY BS62UV4000TC BS62UV4000STC BS62UV4000SC B...