Preliminary data
BSA 223SP
OptiMOS® -P Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Super Logic Le...
Preliminary data
BSA 223SP
OptiMOS® -P Small-Signal-Transistor
Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated
Product Summary VDS R DS(on) ID
SC-75
-20 1.2 -0.39
V Ω A
Drain pin 3
Type BSA 223SP
Package SC-75
Ordering Code Q67042-S4176
Marking BPs
Gate pin1 Source pin 2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -0.39 -0.31 -1.56 1.4 -6
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
Avalanche energy, single pulse
ID=-0.39 A , VDD=-10V, RGS=25Ω
mJ kV/µs V W °C
Reverse diode d v/dt
IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source
voltage Power dissipation
TA=25°C
±12 0.25 -55... +150 55/150/56
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-08-26
Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded RthJS RthJA Symbol min. Values typ.
BSA 223SP
Unit max. 150 500 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown
voltage
V GS=0, I D=-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6
Values typ. -0.9 max. -1.2
Unit
V
Gate threshold
voltage, VGS = V DS
ID=-1.5µA
Zero gate
voltage drain current
V DS=-20V, VG...