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BSA223SP

Infineon Technologies AG

OptiMOS-P Small-Signal-Transistor

Preliminary data BSA 223SP OptiMOS® -P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Le...


Infineon Technologies AG

BSA223SP

File Download Download BSA223SP Datasheet


Description
Preliminary data BSA 223SP OptiMOS® -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Product Summary VDS R DS(on) ID SC-75 -20 1.2 -0.39 V Ω A Drain pin 3 Type BSA 223SP Package SC-75 Ordering Code Q67042-S4176 Marking BPs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.39 -0.31 -1.56 1.4 -6 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, RGS=25Ω mJ kV/µs V W °C Reverse diode d v/dt IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C ±12 0.25 -55... +150 55/150/56 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-08-26 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded RthJS RthJA Symbol min. Values typ. BSA 223SP Unit max. 150 500 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, I D=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = V DS ID=-1.5µA Zero gate voltage drain current V DS=-20V, VG...




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