BSB012NE2LXI

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB012NE2LXI DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSB012NE2LXI 1Description Features OptimizedSyncFETforhighperformanceBuckconverter IntegratedmonolithicSchottkylikediode Lowprofile(<0.7mm) 100%avalanchetested 100%RGTested Double-sidedcooling CompatiblewithDirectFET®packageMXfootprintandoutline1) QualifiedaccordingtoJEDEC2)fortargetapplications Pb-freeleadplating;RoHScompliant CanPAKM-size Drain Drain Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.2 mΩ ID 170 A Qoss 39 nC Qg(0V..10V) 62 nC Gate Source Type/OrderingCode BSB012NE2LXI Package MG-WDSON-2 Marking 05E2 RelatedLinks - 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered ...