BSB029P03NX3

n-Channel Power MOSFET OptiMOS™ BSB029P03NX3 Data Sheet 1.92, 2011-03-21 Preliminary Industrial & Multimarket Free Datasheet http://www.datasheet4u.com/ OptiMOS™ Power-MOSFET BSB029P03NX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance in small footprint packages make OptiMOS™ P3 -30V the best choice for the demanding requirements of load switch, high-side switch and battery management applications. OptiMOS™ P3 products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. Features P-Channel MOSFET Very low on-resistance RDS(on) Qualified for consumer level application Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET® package MX footprint and outline1) 100% avalanche tested Low parasitic inductance Low profile (<0.7 mm) Applications Load switch High-side switch Battery management Key Performance Parameters Value -30 2.9 137 106 66 Unit V mΩ A nC Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools Table 1 Parameter VDS RDS(on),max ID QOSS Qg.typ Type BSB029P03LX3 G Package MG-WDSON-2 Marking 5103 1) DirectFET ® is a trademark of International Rectifier Corporation. BSB027P03LX3 G uses DirectFET ® techn...