BSB044N08NN3G

BSB044N08NN3 G OptiMOS™3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Dual sided cooling low parasitic inductance Product Summary VDS RDS(on),max ID 80 4.4 90 CanPAKTM M MG-WDSON-2 Low profile (<0.7mm) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Compatible with DirectFET® package MN footprint and outline2) V mW A Type BSB044N08NN3 G Package MG-WDSON-2 Outline MN Marking 0208 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D V GS=10 V, T C=25 °C 90 V GS=10 V, T C=100 °C 68 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 18 Pulsed drain current3) I D,pulse T C=25 °C 360 Avalanche energy, single pulse E AS I D=30 A, R GS=25 W 660 Gate source voltage V GS ±20 1) J-...