BSC011N03LSI

BSC011N03LSI MOSFET OptiMOSTMPower-MOSFET,30V Features OptimizedforhighperformanceSMPS IntegratedmonolithicSchottky-likediode Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 1.1 mΩ ID 230 A QOSS 45 nC QG(0V..10V) 68 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC011N03LSI Package PG-TDSON-8 Marking 011N03LI RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.5,2023-10-02 OptiMOSTMPower-MOSFET,30V BSC011N03LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....