BSC014N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low...
BSC014N03MS G
OptiMOS™3 M-Series Power-
MOSFET
Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOMSW for High Frequency SMPS 100% avalanche tested N-channel Very low on-resistance R DS(on) @ V GS=4.5 V Excellent gate charge x R DS(on) product (FOM) Qualified according to JEDEC1) for target applications
Product Summary
V DS R DS(on),max
ID
V GS=10 V V GS=4.5 V
30 V 1.4 mΩ 1.75 100 A
PG-TDSON-8
Superior thermal resistance
Pb-free plating; RoHS compliant;
Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC014N03MS G
PG-TDSON-8 014N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source
voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=4.5 V, T A=25 °C...
