BSC016N03LSG

BSC016N03LS G OptiMOS™3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel Product Summary V DS R DS(on),max ID 30 V 1.6 mΩ 100 A PG-TDSON-8 Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant; Halogen-free according to IEC61249-2-21 Type Package Marking BSC016N03LS G PG-TDSON-8 016N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 100 A 100 Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W2) I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 100 100 32 400 50 290 mJ 6 kV/µs ±20 V Rev. 1.28 page 1 2009-10-22 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSC016N03LS G Value 125 2.5 -55 ... 150 55/150/56 Unit W °C Parameter Symbol Conditions...