Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Type
OptiMOSTM Power-Transistor
Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
BSC028N06NS
Product Summary VDS RDS(on),max ID Qoss QG(0..10V)
60 2.8 100 43 37
V mW A nC nC
PG-TDSON-8
Type BSC028N06NS
Package PG-TDSON-8
Marking 028N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
100 A
V GS=10 V, T C=100 °C
83
V GS=10 V, T C=25 °C, R thJA =50K/W 2)
23
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
100 mJ
Gate source
voltage
V GS
±20 V
1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. 3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.1
page 1
2013-01-18
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W3)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC028N06NS
Value 83
2.5
-55 ... 150 55/150/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
...
