BSC035N04LSG

BSC035N04LS G OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC for target applications N-channel; Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type BSC035N04LS G Package PG-TDSON-8 Marking 035N04LS 1) Product Summary V DS R DS(on),max ID 40 3.5 100 PG-TDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 100 71 92 58 Unit A 21 400 50 65 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω J-STD20 and JESD22 Rev. 1.04 page 1 2009-10-20 BSC035N04LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=50 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 69 2.5 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC bottom top Devi...