BSC037N025SG

BSC037N025S G OptiMOS®2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC for target applications Logic level / N-channel Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant Type BSC037N025S G Package PG-TDSON-8 Marking 37N025S 1 Product Summary V DS R DS(on),max ID 25 3.7 100 V mΩ A PG-TDSON-8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W 2) Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation I D,pulse E AS dv /dt V GS P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 0.94 page 1 T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Value 100 68 21 200 350 6 ±20 69 2.8 -55 ... 150 55/150/56 2006-05-10 °C mJ kV/µs V W Unit A BSC037N025S G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area2) 1.8 62 45 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdo...