OptiMOS™3 Power-MOSFET
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified...
OptiMOS™3 Power-
MOSFET
Features Fast switching
MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21
BSC057N03LS G
Product Summary VDS RDS(on),max ID
30 5.7 71
PG-TDSON-8
V mW A
Type BSC057N03LS G
Package PG-TDSON-8
Marking 057N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source
voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
I D,pulse I AS E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=40 A, R GS=25 W
I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C
Value 71 45 58 37
17 284 50 25
6
±20
Unit A
mJ kV/µs V
Rev. 2.1
page 1
2013-05-17
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC057N03LS G
Value 45
2.5
-55 ... 150 55/150/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
...
