OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • ...
OptiMOS™3 Power-Transistor
Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
BSC340N08NS3 G
BSC340N08NS3 G
Product Summary V DS R DS(on),max ID
80 V 34 mΩ 23 A
Package Marking
PG-TDSON-8 340N08NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Value 23 15
Unit A
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
7
Pulsed drain current3) Avalanche energy, single pulse4) Gate source
voltage
I D,pulse E AS V GS
T C=25 °C I D=12 A, R GS=25 Ω
92 20 mJ ±20 V
1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one...
