$(*'#$%TM3 Power-Transistor
Features : % 07*- 5 '!2% # (!0'% &- 0()'( &0% /3% ,# 7!..*)# !2)- ,1 : .2)+ )8% $ &- 0$ # ...
$(*'#$%TM3 Power-Transistor
Features : % 07*- 5 '!2% # (!0'% &- 0()'( &0% /3% ,# 7!..*)# !2)- ,1 : .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- , : # (!,,% * ,- 0+ !**% 4% * : 6# % **% ,2 '!2% # (!0'% 6R DS(on) product (FOM) : % 07*- 5 - , 0% 1)12!,# % R DS(on) :
9 - .% 0!2),' 2% + .% 0!230% : " &0% % *% !$ .*!2),' - # - + .*)!,2 : 3!*)&)% $ !# # - 0$ ),' 2- 1) for target application : !*- '% , &0% % !# # - 0$ ),' 2-
BSC440N10NS3 G
Product Summary VDS RDS(on),max ID
100 V 44 m# 18 A
PG-TDSON-8
Type BSC440N10NS3 G
Package PG-TDSON-8
Marking 440N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C, R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=12 A, R GS=25 #
Gate source
voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
18 11
5.3
72 18 ±20 29 -55 ... 150 55/150/56
Unit A
mJ V W °C
Rev. 2.4
page 1
2009-10-30
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
R thJC R thJA
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
BSC440N10NS3 G
min.
Values typ.
Unit max.
- - 4.3 K/W - - 50
Static characteristics Drain-source breakdown
voltage Gate t...