BSD235N

OptiMOS™2 Small-Signal-Transistor Features Dual N-channel Enhancement mode Super Logic level (2.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 BSD235N Product Summary VDS RDS(on),max ID VGS=4.5 V VGS=2.5 V 20 V 350 mW 600 0.95 A PG-SOT-363 65 4 1 23 Type Package Tape and Reel Information BSD235N PG-SOT-363 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking X6s Lead Free Yes Packing Non dry Value 0.95 0.76 3.8 Unit A Avalanche energy, single pulse E AS I D=0.95 A, R GS=16 W 1.6 mJ Reverse diode dv /dt dv /dt I D=0.95 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation Operating and storage temperature V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 (1) Remark: only one of both transistors in operation. 6 ±12 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.5 page 1 2014-07-29 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSD235N min. Values typ. Unit max. R thJA minimal footprint(2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate thresh...