BSD840N

OptiMOS™2 Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 BSD840N Product Summary VDS RDS(on),max ID VGS=2.5 V VGS=1.8 V 20 V 400 mW 560 0.88 A PG-SOT-363 654 1 23 Type BSD840N Package Tape and Reel Information PG-SOT-363 H6327: 3000 pcs/ reel Marking XBs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Symbol Conditions Value Unit Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C 0.88 A 0.71 3.5 Avalanche energy, single pulse E AS I D=0.88 A, R GS=16 W 1.6 mJ Reverse diode dv /dt dv /dt I D=0.88 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation 2) Operating and storage temperature V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Remark: only one of both transistors in operation. 6 ±8 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.4 page 1 2014-09-19 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSD840N min. Values typ. Unit max. R thJA minimal footprint2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate th...