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BSF024N03LT3G

Infineon

Power-Transistor

BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-...


Infineon

BSF024N03LT3G

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BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Features Optimized for high switching frequency DC/DC converter Very low on-resistance R DS(on) Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 V 2.4 mΩ 106 A Low parasitic inductance Low profile (<0.7 mm) 100% avalanche tested CanPAKTM S MG-WDSON-2 100% Rg Tested Double-sided cooling Pb-free plating; RoHS compliant Compatible with DirectFET® package ST footprint and outline 1) Qualified according to JEDEC2) for target applications Type BSF024N03LT3 G Package MG-WDSON-2 Outline ST Marking 0703 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 106 A V GS=10 V, T C=100 °C 67 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 15 Pulsed drain current3) Avalanche current, single pulse4) I D,pulse I AS T C=25 °C T C=25 °C 400 40 Avalanche energy, singl...




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