BSF035NE2LQ
OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
25 V 3.5 mW 69 A 13 nC 19 nC
• Double-sided cooling • Compatible with DirectFET® package SQ footprint and outline 1) • Qualified according to JEDEC2) for target applications
CanPAKTM S MG-WDSON-2
Type BSF035NE2LQ
Package MG-WDSON-2
Outline SQ
Marking 04E.
Power-Transistor
BSF035NE2LQ
OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
25 V 3.5 mW 69 A 13 nC 19 nC
• Double-sided cooling • Compatible with DirectFET® package SQ footprint and outline 1) • Qualified according to JEDEC2) for target applications
CanPAKTM S MG-WDSON-2
Type BSF035NE2LQ
Package MG-WDSON-2
Outline SQ
Marking 04E2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
69 A
V GS=10 V, T C=100 °C
44
V GS=10 V, T A=25 °C, R thJA=45 K/W3)
22
Pulsed drain current4) Avalanche current, single pulse5)
I D,pulse I AS
T C=25 °C T C=25 °C
276 40
Avalanche energy, single pulse Gate source voltage
E AS V GS
I D=35 A, R GS=25 W
50 mJ ±20 V
1) CanPAKTM uses DirectFET ® technology li.