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BSF035NE2LQ Datasheet

Part Number BSF035NE2LQ
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet BSF035NE2LQ DatasheetBSF035NE2LQ Datasheet (PDF)

BSF035NE2LQ OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 V 3.5 mW 69 A 13 nC 19 nC • Double-sided cooling • Compatible with DirectFET® package SQ footprint and outline 1) • Qualified according to JEDEC2) for target applications CanPAKTM S MG-WDSON-2 Type BSF035NE2LQ Package MG-WDSON-2 Outline SQ Marking 04E.

  BSF035NE2LQ   BSF035NE2LQ






Power-Transistor

BSF035NE2LQ OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 V 3.5 mW 69 A 13 nC 19 nC • Double-sided cooling • Compatible with DirectFET® package SQ footprint and outline 1) • Qualified according to JEDEC2) for target applications CanPAKTM S MG-WDSON-2 Type BSF035NE2LQ Package MG-WDSON-2 Outline SQ Marking 04E2 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 69 A V GS=10 V, T C=100 °C 44 V GS=10 V, T A=25 °C, R thJA=45 K/W3) 22 Pulsed drain current4) Avalanche current, single pulse5) I D,pulse I AS T C=25 °C T C=25 °C 276 40 Avalanche energy, single pulse Gate source voltage E AS V GS I D=35 A, R GS=25 W 50 mJ ±20 V 1) CanPAKTM uses DirectFET ® technology li.


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